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• W2799813821 abstract "Direct growth of uniform wafer-scale two-dimensional (2D) layered materials using a universal method is of vital importance for utilizing 2D layers into practical applications. Here, we report on the structural and transport properties of large-scale few-layer MoS 2 back-gated field effect transistors (FETs), fabricated using conventional pulsed laser deposition (PLD) technique. Raman spectroscopy and transmission electron microscopy results confirmed that the obtained MoS 2 layers on SiO 2 /Si substrate are multilayers. The FETs devices exhibit a relative high on/off ratio of 5 × 10 2 and mobility of 0.124 cm 2 V −1 S −1 . Our results suggest that the PLD would be a suitable pathway to grow 2D layers for future industrial device applications." @default.
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• W2799813821 date "2018-01-01" @default.
• W2799813821 modified "2023-10-16" @default.
• W2799813821 title "Fabrication and Characterization of Two-Dimensional Layered MoS₂ Thin Films by Pulsed Laser Deposition" @default.
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• W2799813821 doi "https://doi.org/10.1155/2018/3485380" @default.
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