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• W2800276353 abstract "Spontaneous pattern formation by energetic ion beams is usually explained in terms of surface-curvature dependent sputtering and atom redistribution in the target. Recently, the effect of ion implantation on surface stability has been studied for nonvolatile ion species, but for the case of noble gas ion beams it has always been assumed that the implanted atoms can be neglected. In this work, we show by molecular dynamics (MD) and Monte Carlo (MC) simulations that this assumption is not valid in a wide range of implant conditions. Sequential-impact MD simulations are performed for 1-keV Ar, 2-keV Kr, and 2-keV Xe bombardments of Si, starting with a pure single-crystalline Si target and running impacts until sputtering equilibrium has been reached. The simulations demonstrate the importance of the implanted ions for crater-function estimates. The atomic volumes of Ar, Kr, and Xe in Si are found to be a factor of two larger than in the solid state. To extend the study to a wider range of energies, MC simulations are performed. We find that the role of the implanted ions increases with the ion energy although the increase is attenuated for the heavier ions. The analysis uses the crater function formalism specialized to the case of sputtering equilibrium." @default.
• W2800276353 created "2018-05-17" @default.
• W2800276353 creator A5044901181 @default.
• W2800276353 creator A5059490768 @default.
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• W2800276353 date "2018-04-24" @default.
• W2800276353 modified "2023-09-23" @default.
• W2800276353 title "Crater function moments: Role of implanted noble gas atoms" @default.
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• W2800276353 doi "https://doi.org/10.1103/physrevb.97.155307" @default.
• W2800276353 hasPublicationYear "2018" @default.
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