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• W2800758434 abstract "We studied the surface passivation effect of hydrogenated amorphous silicon (a-Si:H) layers on BaSi2 films. a-Si:H was formed by an electron-beam evaporation of Si, and a supply of atomic hydrogen using radio-frequency plasma. Surface passivation effect was first investigated on a conventional n-Si(111) substrate by capping with 20 nm-thick a-Si:H layers, and next on a 0.5 μm-thick BaSi2 film on Si(111) by molecular beam epitaxy. The internal quantum efficiency distinctly increased by 4 times in a wide wavelength range for sample capped in situ with a 3 nm-thick a-Si:H layer compared to those capped with a pure a-Si layer." @default.
• W2800758434 created "2018-05-17" @default.
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• W2800758434 date "2018-05-01" @default.
• W2800758434 modified "2023-10-11" @default.
• W2800758434 title "Improving the photoresponse spectra of BaSi₂ layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma" @default.
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• W2800758434 doi "https://doi.org/10.1063/1.5025021" @default.
• W2800758434 hasPublicationYear "2018" @default.
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