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• W2800846306 abstract "In this paper, GaAs nanowires with different V/III ratios (70, 140, 280 and 560) were vertically grown from bottom to top on GaAs substrates by using metal organic chemical vapor deposition based on gold assisted vapor-liquid-solid mechanism. It is found that the growth rate of nanowires is inversely proportional to their V/III ratio. And the V/III ratio can also change nanowire growth type. For the nanowire with small V/III ratios (≤280), the reactants are most from those atoms merged in the catalyst. But, for the nanowire with V/III ratio 560, the contribution mainly comes from the diffusions of atoms pyrolyzed on the surface of the nanowire and the substrate. A shrunken neck under the catalyst is observed in TEM characterizations. These results will provide a theoretical basis for potential practical applications of nanowire-based devices." @default.
• W2800846306 created "2018-05-17" @default.
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• W2800846306 date "2018-05-01" @default.
• W2800846306 modified "2023-10-07" @default.
• W2800846306 title "The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD" @default.
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• W2800846306 doi "https://doi.org/10.1063/1.5028350" @default.
• W2800846306 hasPublicationYear "2018" @default.
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