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- W2801268186 abstract "Abstract Monolayer transition metal dichalcogenides/metal (MX 2 /metal) based transistors have been widely studied. However, further development is hindered by the large contact resistance between MX 2 and metal contact. In this paper, we demonstrated that interfacial charge transfer between MX 2 and metal is the key for tuning contact resistance. With the lattice misfit criterion applied to screen combination of MX 2 s and metals, it has been found out that both phase stability of MX 2 and contact nature between MX 2 and metal will be sensitively affected by interfacial charge transfer. Additionally, we have identified seven MX 2 /metal systems that can potentially form zero Schottky barrier contacts utilizing phase engineering. On base of interfacial charge calculations and contact resistance analysis, we have presented three types of MX 2 /metal contacts that can be formed with distinguished contact resistance. Our theoretical results not only demonstrate various choice of MX 2 /metal designs in order to achieve different amounts of interfacial charge transfer as well as manipulate contact resistance, but also shed light on designing ohmic contacts in MX 2 /metal systems." @default.
- W2801268186 created "2018-05-17" @default.
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- W2801268186 date "2018-05-14" @default.
- W2801268186 modified "2023-10-16" @default.
- W2801268186 title "Tunable phase stability and contact resistance of monolayer transition metal dichalcogenides contacts with metal" @default.
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- W2801268186 doi "https://doi.org/10.1038/s41699-018-0059-1" @default.
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