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• W2801339495 abstract "Thin film transistors (TFTs) constitute important components employed in several printed electronic applications. Many electronic devices comprise TFTs, and their performances are determined by transistor specifications. As such, the optimum performance of a TFT assumes paramount importance in electronic applications. This paper reports the enhanced performance of an organic TFT (OTFT) achieved through use of the structural scaling technique employed during the gravure printing process. Extremely thin 30 nm-thick gravure printed Ag was used as source-drain electrodes while dielectric and semiconductor layers were gravure printed using D series and SP series from Merck, respectively. By scaling thicknesses of the source–drain electrode and dielectric layer, the electrical performance of an OTFT was found to have improved, during the roll-to-roll gravure printing process, in terms of an enhanced mobility of 0.295 cm2 V-1 s-1 and an on–off current ratio of 106. Additionally, OTFTs fabricated using the proposed roll-to-roll gravure printing process exhibit a yield percentage of 95% with a maximum operating speed of 15 m min−1. Furthermore, the OTFT demonstrated uniform electrical characteristics owing to use of an amorphous polymer semiconductor, which reduces the variability of each transistor." @default.
• W2801339495 created "2018-05-17" @default.
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• W2801339495 date "2018-08-01" @default.
• W2801339495 modified "2023-10-02" @default.
• W2801339495 title "Enhanced performance and reliability of organic thin film transistors through structural scaling in gravure printing process" @default.
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• W2801339495 doi "https://doi.org/10.1016/j.orgel.2018.04.039" @default.
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