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- W2801350012 abstract "Silicon photonics would strongly benefit from monolithically integrated low-threshold silicon-based laser operating at room temperature, representing today the main challenge toward low-cost and power-efficient electronic–photonic integrated circuits. Here we demonstrate low-threshold lasing from fully transparent nanostructured porous silicon (PSi) monolithic microcavities (MCs) infiltrated with a polyfluorene derivative, namely, poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The PFO-infiltrated PSiMCs support single-mode blue lasing at the resonance wavelength of 466 nm, with a line width of ∼1.3 nm and lasing threshold of 5 nJ (15 μJ/cm2), a value that is at the state of the art of PFO lasers. Furthermore, time-resolved photoluminescence shows a significant shortening (∼57%) of PFO emission lifetime in the PSiMCs, with respect to nonresonant PSi reference structures, confirming a dramatic variation of the radiative decay rate due to a Purcell effect. Our results, given also that blue lasing is a worst case for silicon photonics, are highly appealing for the development of low-cost, low-threshold silicon-based lasers with wavelengths tunable from visible to the near-infrared region by simple infiltration of suitable emitting polymers in monolithically integrated nanostructured PSiMCs." @default.
- W2801350012 created "2018-05-17" @default.
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- W2801350012 date "2018-05-04" @default.
- W2801350012 modified "2023-10-12" @default.
- W2801350012 title "Room-Temperature Low-Threshold Lasing from Monolithically Integrated Nanostructured Porous Silicon Hybrid Microcavities" @default.
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- W2801350012 doi "https://doi.org/10.1021/acsnano.8b00875" @default.
- W2801350012 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/6504192" @default.
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