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- W2801926872 abstract "Threshold voltage instability (Vth) is a critical issue to the device reliability of GaN-based metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). As well as the transient voltage shift caused by interface trapping effect, retentive voltage shift in Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /AlGaN/GaN MOS-HEMTs was also demonstrated in this paper, which was attributed to border trapping effects. Interface trapping is found dominant at low gate voltage, and then the transient voltage shift tends to be saturated (~1.2 V) with gate voltage above 5 V. After the interface traps (~3×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> ) are fully filled, border trapping with long emission time constant become remarkable, resulting in retentive positive voltage shift over 8 V. In addition to the low-field emission, border de-trapping mechanism of high-field electron tunneling is proposed, which is proved by the V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> recovery after off-state high-voltage sweep." @default.
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- W2801926872 date "2018-03-01" @default.
- W2801926872 modified "2023-09-25" @default.
- W2801926872 title "Threshold voltage shift and interface/border trapping mechanism in Al<inf>2</inf>O<inf>3</inf>/AlGaN/GaN MOS-HEMTs" @default.
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- W2801926872 doi "https://doi.org/10.1109/irps.2018.8353704" @default.
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