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• W2802211906 abstract "Abstract In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs." @default.
• W2802211906 created "2018-05-17" @default.
• W2802211906 creator A5010172715 @default.
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• W2802211906 date "2018-08-01" @default.
• W2802211906 modified "2023-09-24" @default.
• W2802211906 title "Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors" @default.
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• W2802211906 doi "https://doi.org/10.1016/j.spmi.2018.05.009" @default.
• W2802211906 hasPublicationYear "2018" @default.
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