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- W2802247674 abstract "We report perfect light absorption due to the excitation of bound and radiative p-polarized optical modes in epsilon-near-zero (ENZ) conducting oxide nanolayers with thicknesses as thin as λENZ/100. Perfect absorption in the wavelength range of 600 nm to 2 μm may be achieved for unpatterned indium tin oxide (ITO) nanolayers with an electron density of 5 × 1020 to 2 × 1021 cm–3. Multilayer stacks of ITO nanolayers with a gradient of electron densities and optimized thicknesses enable broadband perfect absorption. The postfabrication tuning, of the perfect absorption wavelength, of 32 nm is achieved in a metal-oxide-semiconductor (MOS) geometry with applied voltage of 5 V. Such ultrathin and tunable broadband perfect absorbers have many potential applications in nonlinear flat ENZ optics, thermophotovoltaics, hot-electron generation in the ENZ regime, and other fields." @default.
- W2802247674 created "2018-05-17" @default.
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- W2802247674 date "2018-04-23" @default.
- W2802247674 modified "2023-10-16" @default.
- W2802247674 title "Field-Effect Tunable and Broadband Epsilon-Near-Zero Perfect Absorbers with Deep Subwavelength Thickness" @default.
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- W2802247674 doi "https://doi.org/10.1021/acsphotonics.7b01373" @default.
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