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• W2803040449 endingPage "3232" @default.
• W2803040449 startingPage "3223" @default.
• W2803040449 abstract "The demand for transistors and memory devices with smaller feature sizes and increasingly complex architectures furthers the need for advanced thin film patterning techniques. A prepatterned, sacrificial layer can be used as a template for bottom-up fill of new materials which would otherwise be difficult to pattern using traditional top-down lithographic methods. This work investigates initial growth of TiN, TiO2, and HfO2 thin films during thermal atomic layer deposition (ALD) onto a high density, amorphous carbon (aC) sacrificial layer. ALD of TiN by TiCl4/NH3 at 390 °C, TiO2 by Ti(OCH3)4/H2O at 250 °C, and HfO2 by HfCl4/H2O at 300 °C on as-deposited aC films resulted in uninhibited, continuous thin film growth. We find that carbon surface reduction and passivation using a H2 plasma resulted in delayed film coalescence for TiN, TiO2, and HfO2 on the aC. After 200 TiN cycles on H2 plasma-treated aC, Rutherford backscattering spectrometry shows Ti levels below the detection limit (8 × 1013 at/cm2), whereas SiO2 or Si3N4 substrates show TiN growth of ∼6 nm, corresponding to a selectivity of ∼200:1. Exposing plasma-treated aC to H2O induces nucleation for TiN ALD, consistent with favorable nucleation on hydroxyl sites. Therefore, the H2O co-reagent in TiO2 and HfO2 ALD contributes to loss of selectivity compared to TiN ALD using NH3. We confirm scaling of selectivity to sub-50 nm patterns using 45 nm aC/Si3N4 line/space patterns, where 3.5 nm TiO2 and 5.8 nm TiN films are deposited on Si3N4 with minimal particle formation on aC, with selectivity loss primarily on feature corners and edges. We conclude that improved scaling of selectivity to nanometer scale patterns can be achieved by optimizing surface loading and extent of plasma exposure, and by further understanding shape effects in nanoscale surface plasma modification." @default.
• W2803040449 created "2018-05-17" @default.
• W2803040449 creator A5000465847 @default.
• W2803040449 creator A5020571434 @default.
• W2803040449 creator A5050610161 @default.
• W2803040449 creator A5054637809 @default.
• W2803040449 creator A5086449780 @default.
• W2803040449 creator A5090253402 @default.
• W2803040449 date "2018-04-27" @default.
• W2803040449 modified "2023-09-30" @default.
• W2803040449 title "Area-Selective Atomic Layer Deposition of TiN, TiO₂, and HfO₂ on Silicon Nitride with inhibition on Amorphous Carbon" @default.
• W2803040449 cites W1969224115 @default.
• W2803040449 cites W1987397621 @default.
• W2803040449 cites W1995191254 @default.
• W2803040449 cites W1999829267 @default.
• W2803040449 cites W2018152850 @default.
• W2803040449 cites W2021566073 @default.
• W2803040449 cites W2025520439 @default.
• W2803040449 cites W2030675563 @default.
• W2803040449 cites W2041600236 @default.
• W2803040449 cites W2043847431 @default.
• W2803040449 cites W2052340188 @default.
• W2803040449 cites W2061505542 @default.
• W2803040449 cites W2066725997 @default.
• W2803040449 cites W2069760501 @default.
• W2803040449 cites W2078833627 @default.
• W2803040449 cites W2116669660 @default.
• W2803040449 cites W2119473943 @default.
• W2803040449 cites W2144710382 @default.
• W2803040449 cites W2171302889 @default.
• W2803040449 cites W2204918453 @default.
• W2803040449 cites W2227519154 @default.
• W2803040449 cites W2304832835 @default.
• W2803040449 cites W2313542153 @default.
• W2803040449 cites W2345790135 @default.
• W2803040449 cites W2471794295 @default.
• W2803040449 cites W2503568506 @default.
• W2803040449 cites W2527291347 @default.
• W2803040449 cites W2556404947 @default.
• W2803040449 cites W2582721814 @default.
• W2803040449 cites W2589816053 @default.
• W2803040449 cites W2593591271 @default.
• W2803040449 cites W2615269682 @default.
• W2803040449 cites W2619624400 @default.
• W2803040449 cites W2735998372 @default.
• W2803040449 cites W2742038860 @default.
• W2803040449 cites W846878406 @default.
• W2803040449 doi "https://doi.org/10.1021/acs.chemmater.8b00017" @default.
• W2803040449 hasPublicationYear "2018" @default.
• W2803040449 type Work @default.
• W2803040449 sameAs 2803040449 @default.
• W2803040449 citedByCount "60" @default.
• W2803040449 countsByYear W28030404492018 @default.
• W2803040449 countsByYear W28030404492019 @default.
• W2803040449 countsByYear W28030404492020 @default.
• W2803040449 countsByYear W28030404492021 @default.
• W2803040449 countsByYear W28030404492022 @default.
• W2803040449 countsByYear W28030404492023 @default.
• W2803040449 crossrefType "journal-article" @default.
• W2803040449 hasAuthorship W2803040449A5000465847 @default.
• W2803040449 hasAuthorship W2803040449A5020571434 @default.
• W2803040449 hasAuthorship W2803040449A5050610161 @default.
• W2803040449 hasAuthorship W2803040449A5054637809 @default.
• W2803040449 hasAuthorship W2803040449A5086449780 @default.
• W2803040449 hasAuthorship W2803040449A5090253402 @default.
• W2803040449 hasConcept C113196181 @default.
• W2803040449 hasConcept C127413603 @default.
• W2803040449 hasConcept C171250308 @default.
• W2803040449 hasConcept C178790620 @default.
• W2803040449 hasConcept C185592680 @default.
• W2803040449 hasConcept C19067145 @default.
• W2803040449 hasConcept C191897082 @default.
• W2803040449 hasConcept C192562407 @default.
• W2803040449 hasConcept C194760766 @default.
• W2803040449 hasConcept C2778489163 @default.
• W2803040449 hasConcept C2779227376 @default.
• W2803040449 hasConcept C33574316 @default.
• W2803040449 hasConcept C42360764 @default.
• W2803040449 hasConcept C49040817 @default.
• W2803040449 hasConcept C525849907 @default.
• W2803040449 hasConcept C544956773 @default.
• W2803040449 hasConcept C56052488 @default.
• W2803040449 hasConcept C61048295 @default.
• W2803040449 hasConcept C69544855 @default.
• W2803040449 hasConcept C8010536 @default.
• W2803040449 hasConceptScore W2803040449C113196181 @default.
• W2803040449 hasConceptScore W2803040449C127413603 @default.
• W2803040449 hasConceptScore W2803040449C171250308 @default.
• W2803040449 hasConceptScore W2803040449C178790620 @default.
• W2803040449 hasConceptScore W2803040449C185592680 @default.
• W2803040449 hasConceptScore W2803040449C19067145 @default.
• W2803040449 hasConceptScore W2803040449C191897082 @default.
• W2803040449 hasConceptScore W2803040449C192562407 @default.
• W2803040449 hasConceptScore W2803040449C194760766 @default.
• W2803040449 hasConceptScore W2803040449C2778489163 @default.
• W2803040449 hasConceptScore W2803040449C2779227376 @default.
• W2803040449 hasConceptScore W2803040449C33574316 @default.
• W2803040449 hasConceptScore W2803040449C42360764 @default.

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