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- W2803056187 abstract "Atomic layer doped Yb2O3:Er and Yb2Si2O7:Er nanolaminate films are fabricated on silicon by atomic layer deposition, and ∼1530 nm electroluminescence (EL) is obtained from the metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on these films. The Yb2O3 films transfer to Yb2Si2O7 phase after annealing above 1000 °C. Intense photoluminescence from Yb2Si2O7 film confirms high efficiency and energy transfer under optical excitation, but the limited electron conduction restricts the EL performance. EL from the Yb2O3:Er MOSLED outperforms, presenting an external quantum efficiency up to 8.5% and the power efficiency of 1 × 10−3. The EL is derived to result from the impact excitation of Er3+ ions by hot electrons, which stem from Fowler-Nordheim tunneling mechanism under sufficient bias voltage. The critical distance for the cross relaxation of doped Er3+ ions in nanolaminate Yb2O3 matrix is experimentally determined to be ∼3 nm. Such devices manifest the technological potential of Er-doped Yb-oxides for applications in silicon-based optoelectronics." @default.
- W2803056187 created "2018-05-17" @default.
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- W2803056187 date "2018-06-01" @default.
- W2803056187 modified "2023-09-30" @default.
- W2803056187 title "Electroluminescent Yb2O3:Er and Yb2Si2O7:Er nanolaminate films fabricated by atomic layer deposition on silicon" @default.
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- W2803056187 doi "https://doi.org/10.1016/j.optmat.2018.05.001" @default.
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