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- W2803254008 abstract "At the present work, nanocrystalline silicon carbide (3CSiC) irradiated by neutrons (2 × 1013 n/cm2s) up to 20 h. The current–voltage (IV) characteristics of the nanocrystalline 3CSiC particles have been investigated in the voltage range of −100 V to + 100 V with a 5 V step. The slope of the line changed at the IV characteristic of the nanomaterial after neutron irradiation. Simultaneously, the resistance of nanocrystalline 3CSiC decreased approximately from 4 MΩ to 1 MΩ after neutron irradiation. Moreover, the Fowler-Nordheim plots showed that the processes occurred in the nanomaterial were directly based on a tunnel effect and no field emission was observed. It is clear from Fowler-Nordheim plots that, thermal activity is dominated at the all experimental intervals." @default.
- W2803254008 created "2018-06-01" @default.
- W2803254008 creator A5040789595 @default.
- W2803254008 date "2018-09-01" @default.
- W2803254008 modified "2023-09-29" @default.
- W2803254008 title "Current-voltage characteristics of neutron irradiated nanocrystalline silicon carbide (3C SiC)" @default.
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- W2803254008 doi "https://doi.org/10.1016/j.physb.2018.05.027" @default.
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