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• W2804080646 abstract "Ferroelectric tunnel junctions (FTJs) have attracted research interest as promising candidates for non-destructive readout non-volatile memories. Unlike conventional perovskite FTJs, hafnia FTJs offer many advantages in terms of scalability and CMOS compatibility. However, so far, hafnia FTJs have shown poor endurance and relatively low resistance ratios and these have remained issues for real device applications. In our study, we fabricated HfZrO(HZO)-based FTJs with various electrodes (TiN, Si, SiGe, Ge) and improved the memory performance of HZO-based FTJs by using the asymmetry of the charge screening lengths of the electrodes. For the HZO-based FTJ with a Ge substrate, the effective barrier afforded by this FTJ can be electrically modulated because of the space charge-limited region formed at the ferroelectric/semiconductor interface. The optimized HZO-based FTJ with a Ge bottom electrode presents excellent ferroelectricity with a high remnant polarization of 18 μC cm-2, high tunneling electroresistance value of 30, good retention at 85 °C and high endurance of 107. The results demonstrate the great potential of HfO2-based FTJs in non-destructive readout non-volatile memories." @default.
• W2804080646 created "2018-06-01" @default.
• W2804080646 creator A5006226384 @default.
• W2804080646 creator A5029046108 @default.
• W2804080646 date "2018-06-08" @default.
• W2804080646 modified "2023-10-11" @default.
• W2804080646 title "The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO₂" @default.
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• W2804080646 doi "https://doi.org/10.1088/1361-6528/aac6b3" @default.
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