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- W2804262994 abstract "Understanding the physics of defective amorphous semiconductors such as indium gallium zinc oxide ($a$-IGZO) is of paramount importance for engineering thin-film transistors for large-area electronics, like your television. This work introduces a first-principles approach for studying defects in amorphous semiconductors, rationalizing the nature of these defects and offering a coherent description of $a$-IGZO that explains its experimentally observed electrical instabilities. The methodology offers a basis for insightful device optimization." @default.
- W2804262994 created "2018-06-01" @default.
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- W2804262994 date "2018-05-25" @default.
- W2804262994 modified "2023-10-16" @default.
- W2804262994 title "Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide" @default.
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- W2804262994 doi "https://doi.org/10.1103/physrevapplied.9.054039" @default.
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