Matches in SemOpenAlex for { <https://semopenalex.org/work/W2804369683> ?p ?o ?g. }
- W2804369683 endingPage "104" @default.
- W2804369683 startingPage "98" @default.
- W2804369683 abstract "Abstract Passivating contacts based on metal oxides have proven to enable high energy conversion efficiencies for crystalline silicon (c-Si) solar cells at low processing complexity. In this work, the potential of atomic-layer deposited (ALD) Nb2O5 as novel electron-selective passivating contact is explored in terms of recombination parameter J0 and contact resistivity ρc. It is shown that after forming gas annealing, ALD Nb2O5 can provide adequate surface passivation with J0 values down to 25–30 fA/cm2. On HF-treated c-Si surfaces a minimum film thickness of ~ 3 nm is required to achieve this high level of passivation, whereas on surfaces with a wet-chemical SiO2 interlayer the high passivation level is persistent down to film thicknesses of only 1 nm. Ohmic n-type contacts have been achieved using Al as contacting metal, where annealing the samples after Al contacting proved crucial for obtaining good contact properties. Low contact resistivity values of 70 and 124 mΩ cm2 for 1 and 2 nm Nb2O5 films, respectively, have been achieved on c-Si substrates that received an HF treatment prior to Nb2O5 deposition. Transmission electron microscopy imaging shows that on such surfaces the annealing treatment leads to the formation of a (1.7 ± 0.2) nm interfacial oxide in between the c-Si substrate and the Nb2O5 film. The presented results demonstrate the potential of ALD Nb2O5 as electron-selective passivating contact and directions for future research are outlined." @default.
- W2804369683 created "2018-06-01" @default.
- W2804369683 creator A5018346857 @default.
- W2804369683 creator A5029734726 @default.
- W2804369683 creator A5037551215 @default.
- W2804369683 creator A5041192584 @default.
- W2804369683 creator A5047825338 @default.
- W2804369683 creator A5048719407 @default.
- W2804369683 creator A5073372223 @default.
- W2804369683 date "2018-09-01" @default.
- W2804369683 modified "2023-10-10" @default.
- W2804369683 title "Atomic-layer deposited Nb2O5 as transparent passivating electron contact for c-Si solar cells" @default.
- W2804369683 cites W1464307798 @default.
- W2804369683 cites W1810863369 @default.
- W2804369683 cites W1876525337 @default.
- W2804369683 cites W1935270901 @default.
- W2804369683 cites W1968360573 @default.
- W2804369683 cites W1969117353 @default.
- W2804369683 cites W1975778507 @default.
- W2804369683 cites W1979312513 @default.
- W2804369683 cites W1984536076 @default.
- W2804369683 cites W2006209472 @default.
- W2804369683 cites W2016651252 @default.
- W2804369683 cites W2019162166 @default.
- W2804369683 cites W2024147860 @default.
- W2804369683 cites W2028650156 @default.
- W2804369683 cites W2054023292 @default.
- W2804369683 cites W2069785595 @default.
- W2804369683 cites W2078494774 @default.
- W2804369683 cites W2078958129 @default.
- W2804369683 cites W2080708629 @default.
- W2804369683 cites W2097941021 @default.
- W2804369683 cites W2134919421 @default.
- W2804369683 cites W2166449773 @default.
- W2804369683 cites W2270644212 @default.
- W2804369683 cites W2279630372 @default.
- W2804369683 cites W2317576759 @default.
- W2804369683 cites W2323153080 @default.
- W2804369683 cites W2333514402 @default.
- W2804369683 cites W2346325113 @default.
- W2804369683 cites W2404374515 @default.
- W2804369683 cites W2408376730 @default.
- W2804369683 cites W2415705140 @default.
- W2804369683 cites W2522304524 @default.
- W2804369683 cites W2522734752 @default.
- W2804369683 cites W2523210041 @default.
- W2804369683 cites W2523744197 @default.
- W2804369683 cites W2554549508 @default.
- W2804369683 cites W2556803867 @default.
- W2804369683 cites W2557974006 @default.
- W2804369683 cites W2561181570 @default.
- W2804369683 cites W2585475486 @default.
- W2804369683 cites W2586392534 @default.
- W2804369683 cites W2603789271 @default.
- W2804369683 cites W2604977774 @default.
- W2804369683 cites W2613719926 @default.
- W2804369683 cites W2617528854 @default.
- W2804369683 cites W2620218001 @default.
- W2804369683 cites W2651883491 @default.
- W2804369683 cites W2731026405 @default.
- W2804369683 cites W2759659947 @default.
- W2804369683 cites W2784537591 @default.
- W2804369683 cites W2785379241 @default.
- W2804369683 cites W2785393867 @default.
- W2804369683 cites W3097832192 @default.
- W2804369683 doi "https://doi.org/10.1016/j.solmat.2018.04.037" @default.
- W2804369683 hasPublicationYear "2018" @default.
- W2804369683 type Work @default.
- W2804369683 sameAs 2804369683 @default.
- W2804369683 citedByCount "59" @default.
- W2804369683 countsByYear W28043696832018 @default.
- W2804369683 countsByYear W28043696832019 @default.
- W2804369683 countsByYear W28043696832020 @default.
- W2804369683 countsByYear W28043696832021 @default.
- W2804369683 countsByYear W28043696832022 @default.
- W2804369683 countsByYear W28043696832023 @default.
- W2804369683 crossrefType "journal-article" @default.
- W2804369683 hasAuthorship W2804369683A5018346857 @default.
- W2804369683 hasAuthorship W2804369683A5029734726 @default.
- W2804369683 hasAuthorship W2804369683A5037551215 @default.
- W2804369683 hasAuthorship W2804369683A5041192584 @default.
- W2804369683 hasAuthorship W2804369683A5047825338 @default.
- W2804369683 hasAuthorship W2804369683A5048719407 @default.
- W2804369683 hasAuthorship W2804369683A5073372223 @default.
- W2804369683 hasBestOaLocation W28043696831 @default.
- W2804369683 hasConcept C121332964 @default.
- W2804369683 hasConcept C147120987 @default.
- W2804369683 hasConcept C171250308 @default.
- W2804369683 hasConcept C192562407 @default.
- W2804369683 hasConcept C2779227376 @default.
- W2804369683 hasConcept C2780824857 @default.
- W2804369683 hasConcept C49040817 @default.
- W2804369683 hasConcept C62520636 @default.
- W2804369683 hasConcept C69544855 @default.
- W2804369683 hasConceptScore W2804369683C121332964 @default.
- W2804369683 hasConceptScore W2804369683C147120987 @default.
- W2804369683 hasConceptScore W2804369683C171250308 @default.
- W2804369683 hasConceptScore W2804369683C192562407 @default.