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- W2804636868 abstract "Organic semiconducting materials are typically subject to energetic and positional disorder and localization of electronic states. The electronic behavior of these materials are therefore strongly influenced by thermalizationof charge carriers in the localized density of states (DOS). Consequently, non-equilibrium processes play an important role in the operation of devices made of such materials.We show as an example that measurements of recombination dynamics, conducted undertransient or steady-state conditions, can easily be misinterpreted when a detailed understanding of the interplayof thermalization and recombination is missing. To enable adequate measurement analysis, we solvethe multiple-trapping problem for recombining charge carriers and analyze it in the transient and steadyexcitation paradigm for different DOS distributions.We show that recombination rates measured after pulsed excitation are inherently time-dependent, sincerecombination gradually slows down as carriers relax in the DOS. When measuring the recombination orderafter pulsed excitation, this leads to an apparent high-order recombination at short times. As times goeson, the recombination order approaches an asymptotic value. For the Gaussian and the exponential DOSdistributions, this asymptotic value equals the recombination order under continuousexcitation. For a more general DOS distribution, the recombination order can also depend on the carrierdensity, under both transient and steady-state conditions.However, we show that there are cases where thermal equilibrium is never attained in the device.We conclude that transient experiments can provide rich information about recombination in and out ofequilibrium and the underlying DOS occupation provided that consistent modeling of the system is performed." @default.
- W2804636868 created "2018-06-01" @default.
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- W2804636868 date "2018-05-23" @default.
- W2804636868 modified "2023-09-23" @default.
- W2804636868 title "Nonequilibrium and equilibrium operation of organic disordered semiconductor devices (Conference Presentation)" @default.
- W2804636868 doi "https://doi.org/10.1117/12.2307655" @default.
- W2804636868 hasPublicationYear "2018" @default.
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