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• W2804708960 abstract "A semi-empirical model of carrier recombination accounting for hole localization by composition fluctuations in InGaN alloys is extended to polar and nonpolar quantum-well structures. The model provides quantitative agreement with available data on wavelength-dependent radiative and Auger recombination coefficients in polar LEDs. Comparison of calculated internal quantum efficiencies of polar and nonpolar LEDs enables an assessment of the roles of carrier localization, quantum-confined Stark effect, and native material properties for the efficiency decline in the “green gap”." @default.
• W2804708960 created "2018-06-01" @default.
• W2804708960 creator A5034430024 @default.
• W2804708960 date "2018-05-18" @default.
• W2804708960 modified "2023-09-25" @default.
• W2804708960 title "Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”" @default.
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• W2804708960 doi "https://doi.org/10.3390/app8050818" @default.
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