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- W2804911164 abstract "The (hbox {Sr}_{0.88}hbox {Bi}_{0.12}hbox {TiO}_{3}/hbox {SrTi}_{0.92}hbox {Mg}_{0.08}hbox {O}_{3}) (SBTO/STMO) heterostructure films were prepared on (hbox {p}^{+}hbox {-Si}) substrates by sol–gel spin-coating technique, and the films had good crystallinity and uniform grain distribution. The heterostructure films with a structure of Ag/SBTO/STMO/(hbox {p}^{+}hbox {-Si}) exhibited a bipolar, remarkable resistance-switching characteristic, and (R_{mathrm{HRS}}/R_{mathrm{LRS}},,{sim }10^{4}). More importantly, the heterostructure films showed rectifying characteristic in the low resistance state (LRS), and the rectification ratio can reach (10^{2 }) at (pm 1hbox { V}). The dominant resistive-switching conduction mechanism of high resistance state (HRS) was Ohmic behaviour, and the LRS changed to space charge-limited current (SCLC)." @default.
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- W2804911164 date "2018-05-17" @default.
- W2804911164 modified "2023-10-17" @default.
- W2804911164 title "Rectifying resistance-switching behaviour of Ag/SBTO/STMO/ $$hbox {p}^{+}$$ p + -Si heterostructure films" @default.
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- W2804911164 doi "https://doi.org/10.1007/s12034-018-1596-0" @default.
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