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- W2805090599 abstract "High strain in-situ phosphorus doped silicon (called HS-Si:P) epitaxy in the source/drain (S/D) areas has been adopted for nMOS transistors for 14nm node and beyond, which can boost nMOS drive current by applying tensile strain on device channel and lower contact resistivity. N2 carrier gas were widely used for strain benefit, however, some customers still prefer to hydrogen gas as carrier gas due to better thermal conductivity. In this paper, a H2 based HS-Si:P process was developed in Applied Materials Centura® RP Epi chamber, various process tuning parameters including reaction temperature, process gas, carrier gas flow etc and their impacts on film thickness, strain and resistivity are discussed." @default.
- W2805090599 created "2018-06-13" @default.
- W2805090599 creator A5004947647 @default.
- W2805090599 date "2018-03-01" @default.
- W2805090599 modified "2023-09-26" @default.
- W2805090599 title "Hydrogen based high strain SI:P epitaxy process development and optimization" @default.
- W2805090599 doi "https://doi.org/10.1109/cstic.2018.8369252" @default.
- W2805090599 hasPublicationYear "2018" @default.
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