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• W2806143612 abstract "Abstract Graphene/semiconductor Schottky junctions are an emerging field for high-performance optoelectronic devices. This study investigates not only the steady state but also the transient photoresponse of graphene field-effect transistor (G-FET) of which gate bias is applied through the Schottky barrier formed at an n-type Si/graphene interface with a thin oxide layer, where the oxide thickness is sufficiently thin for tunneling of the charge carrier. To analyze the photoresponse, we formulate the charge accumulation process at the n-Si/graphene interface, where the tunneling process through the SiO x layer to graphene occurs along with recombination of the accumulated holes and the electrons in the graphene at the surface states on the SiO x layer. Numerical calculations show good qualitative agreement with the experimentally obtained results for the photoresponse of G-FET." @default.
• W2806143612 created "2018-06-13" @default.
• W2806143612 creator A5007444796 @default.
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• W2806143612 date "2018-03-19" @default.
• W2806143612 modified "2023-09-23" @default.
• W2806143612 title "Photoresponse of graphene field-effect-transistor with n-type Si depletion layer gate" @default.
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• W2806143612 doi "https://doi.org/10.1038/s41598-018-22974-7" @default.
• W2806143612 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/5859296" @default.
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• W2806143612 hasPublicationYear "2018" @default.
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