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• W2806789059 abstract "We demonstrate solution processing of hydrogen-terminated silicon nanocrystals (H–Si NCs) for flexible electronic devices. To obtain high and uniform conductivity of a solution-processed Si NC film, we adopt a perfectly dispersed colloidal H–Si NC solution. We show a high conductivity (2 × 10–5 S/cm) of a solution-processed H–Si NC film which is spin-coated in air. The NC film (area: 100 mm2) has uniform conductivity and responds to laser irradiation with 6.8 and 24.1 μs of rise and fall time. By using time-of-flight measurements, we propose a charge transport model in the H–Si NC film. For the proof-of-concept of this study, a flexible photodetector on a polyethylene terephthalate substrate is demonstrated by spin-coating colloidal H–Si NC solution in air. The photodetector can be bent in 5.9 mm bending radius at smallest, and the device properly works after being bent in 2500 cycles." @default.
• W2806789059 created "2018-06-13" @default.
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• W2806789059 date "2018-05-29" @default.
• W2806789059 modified "2023-10-17" @default.
• W2806789059 title "Solution Processing of Hydrogen-Terminated Silicon Nanocrystal for Flexible Electronic Device" @default.
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• W2806789059 doi "https://doi.org/10.1021/acsami.8b04072" @default.
• W2806789059 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/29808665" @default.
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