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• W2806871204 abstract "In this letter, we present high-performance reverse-conduction GaN-on-Si metal-oxide-semiconductor high-electron-mobility transistors (RC-MOSHEMTs) with integrated tri-anode freewheeling diodes. Tri-anode Schottky barrier diode presenting small turn-ON voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> ), ultra-low reverse leakage current, and high breakdown voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BR</sub> ) was incorporated at portions of the drift region of AlGaN/GaN MOSHEMTs as freewheeling diodes. The tri-anode RC-MOSHEMTs exhibited outstanding reverse-conduction performance with a small V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> of 0.55 V, along with a high V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BR</sub> of 1150 V, state-of-the-art low ON-resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> ) of 8.83 Ω · mm, and high-power figure-of-merit (FOM = V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BR</sub> 2/R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON,SP</sub> ) of 1.32 GW/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . These results reveal the potential of the tri-gate/tri-anode technology for future integrated power electronic devices." @default.
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• W2806871204 date "2018-07-01" @default.
• W2806871204 modified "2023-09-30" @default.
• W2806871204 title "1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes" @default.
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• W2806871204 doi "https://doi.org/10.1109/led.2018.2842031" @default.
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