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- W2807013615 abstract "We demonstrate the fabrication of a monolayer graphene/β-Ga2O3 heterostructure and its interesting prospect of producing a suitable Schottky barrier potential for deep-ultraviolet (DUV) responsive photovoltaic device. The transient response behavior shows a faster response time for photovoltaic mode operation of the photodiode. The fast response at a zero bias is due to generation of photocurrent under an internal built-in field in the graphene/Ga2O3 interface without any contribution from the trapped carriers. The fabricated device also shows an excellent photoresponsivity of 6.1 A W−1 with a slower response time at a low reverse bias voltage (−1.5 V). The high photoresponsivity at a bias voltage can be related to carrier multiplication due to carriers trapping/release process. Our findings show that the graphene/β-Ga2O3 heterostructure can be significant for self-powered/low power consuming DUV detector applications." @default.
- W2807013615 created "2018-06-13" @default.
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- W2807013615 date "2018-05-30" @default.
- W2807013615 modified "2023-09-23" @default.
- W2807013615 title "Photovoltaic Action in Graphene–Ga <sub>2</sub> O <sub>3</sub> Heterojunction with Deep‐Ultraviolet Irradiation" @default.
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- W2807013615 doi "https://doi.org/10.1002/pssr.201800198" @default.
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