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• W2807572017 abstract "This paper presents a statistical simulation study of contact resistivity (Pc) variability (CRV) of TiN and TaN metal-semiconductor (MS) and metal-interfacial layer- semiconductor (MIS) n-Ge(Si) source/drain (S/D) contacts resulting from variation in contact metal work function (φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</sub> ) due to its different grain orientations, and its impact on FinFET performance at 7-nm node using 3-D TCAD simulations. Fermi-level unpinning enables MIS contacts to exhibit lower P <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> than MS contacts but increases their sensitivity to φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</sub> variation leading to higher CRV. CRV is shown to get worse with device scaling, especially for MIS contacts. However, increasing S/D doping, reducing grain size, and doping the interfacial layer (for MIS contacts) demonstrate reduction in CRV. At high S/D dopings, TiN MS contacts on Ge as well as Si meet International Technology Roadmap for Semiconductors requirements with nearly the same Pc as MIS contacts but with significantly lower CRV." @default.
• W2807572017 created "2018-06-13" @default.
• W2807572017 creator A5005282132 @default.
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• W2807572017 date "2018-08-01" @default.
• W2807572017 modified "2023-09-26" @default.
• W2807572017 title "Statistical Simulation Study of Metal Grain-Orientation-Induced MS and MIS Contact Resistivity Variability for 7-nm FinFETs" @default.
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• W2807572017 doi "https://doi.org/10.1109/ted.2018.2841975" @default.
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