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- W2808073221 abstract "The effect of adding fluorine (F) to an organic passivation is investigated in back channel etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The organic passivation consists of propylene glycol monomethyl ether acetate (PGMEA), a polyhydroxy styrene (PHS) resin, a silane coupling agent, and the F additive. From thermogravimetric analysis (TGA), F concentration of 1wt% is found to be the optimum formulation of the organic passivation layer. A-IGZO TFTs fabricated with the fluorinated organic passivation exhibited better stability after thermal annealing at 300°C compared to those without the fluorinated organic passivation. X-ray photoelectron spectroscopy (XPS) depth profiling reveals that components of the organic passivation diffuse into the underlying a-IGZO layer such that traces of C1s and Si2p could be detected at the bottom surface of the a-IGZO. Deconvolution of the O1s spectrum also indicated the reduction of oxygen vacancy (VO) defects. It is assumed that F is responsible for the reduction of VO defects, which in turn leads to better thermal stability." @default.
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- W2808073221 date "2018-01-01" @default.
- W2808073221 modified "2023-10-10" @default.
- W2808073221 title "Thermal Stability Improvement of Back Channel Etched a-IGZO TFTs by Using Fluorinated Organic Passivation" @default.
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- W2808073221 doi "https://doi.org/10.1149/2.0251806jss" @default.
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