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• W2808580079 abstract "We have fabricated a flexible thin-film transistor (TFT) with relevant high performance indices using polymer electrolyte as gate dielectric and amorphous indium–gallium–zinc–oxide (a-IGZO) (a-InGaZn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> ) as a channel on polyimide Kapton tape. Low temperature ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$approx 100~^{circ }text{C}$ </tex-math></inline-formula> –120 °C) prepared a-IGZO, showed n-channel device characteristic, and operated in the enhancement mode with a high saturation mobility of 42 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> / <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text {V}cdot text {s}$ </tex-math></inline-formula> , good ON/OFF ratio of ~10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> , low threshold voltage of ~0.7 V, and low subthreshold swing of ~175mV/decade. The improvements of the performance indices arise due to influence high value of specific gate capacitance of polymer electrolyte. The gate bias stress test of the flexible TFT showed the stable electrical characteristics." @default.
• W2808580079 created "2018-06-21" @default.
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• W2808580079 date "2018-07-01" @default.
• W2808580079 modified "2023-10-16" @default.
• W2808580079 title "Fabrication of Amorphous Indium–Gallium– Zinc–Oxide Thin-Film Transistor on Flexible Substrate Using a Polymer Electrolyte as Gate Dielectric" @default.
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• W2808580079 doi "https://doi.org/10.1109/ted.2018.2834935" @default.
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