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• W2809305959 abstract "Different surface passivation approaches are applied on Cz-Si and FZ-Si samples and long-term stability is investigated during treatments at 60–80 °C and up to 1 sun equivalent illumination intensity. It is shown that SiNx:H and AlOx:H/SiNx:H surface passivation show a much more stable passivation quality when deposited on P-diffused and B-diffused surfaces, respectively. Long-term measurements lead to the conclusion that Cz-Si samples fired at measured peak temperatures up to 750 °C are very stable after regeneration of bulk defects. Samples fired at 850 °C show much stronger bulk-related degradation potentially linked to light and elevated temperature induced degradation (LeTID). Furthermore, Cz-Si samples fired at 850 °C express an instable behavior after a regeneration treatment." @default.
• W2809305959 created "2018-06-29" @default.
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• W2809305959 date "2018-10-01" @default.
• W2809305959 modified "2023-10-18" @default.
• W2809305959 title "On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si" @default.
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• W2809305959 doi "https://doi.org/10.1016/j.solmat.2018.05.031" @default.
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