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• W2810379816 abstract "The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance." @default.
• W2810379816 created "2018-07-10" @default.
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• W2810379816 date "2018-08-01" @default.
• W2810379816 modified "2023-10-06" @default.
• W2810379816 title "Layout influence on microwave performance of graphene field effect transistors" @default.
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• W2810379816 doi "https://doi.org/10.1049/el.2018.5113" @default.
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