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• W2810567491 abstract "We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are required for the excitation of band-to-band transitions, fourth-order (INBE ∝ Iexc4) and sub-linear (IYL ∝ Iexc0.5) dependencies were observed for the intensity of the NBE and YL as a function of the excitation intensity, respectively. Modelling the carrier dynamics with a few-level rate-equation model revealed that, for high excitation irradiances, the electron-hole population generated by three-photon absorption is such that the NBE recombination rate is intensified (exponent &gt; 3) and, at the same time, the competition between the electron capturing and the defect-level emission rate suppresses the YL (exponent &lt; 1)." @default.
• W2810567491 created "2018-07-10" @default.
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• W2810567491 date "2018-06-26" @default.
• W2810567491 modified "2023-10-18" @default.
• W2810567491 title "Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption" @default.
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• W2810567491 doi "https://doi.org/10.1063/1.5027395" @default.
• W2810567491 hasPublicationYear "2018" @default.
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