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- W2810587947 abstract "The effect of the film density of a SiO2 passivation layer on the positive bias stress (PBS) stability of an In–Ga–Zn–O thin-film transistor (IGZO TFT) was investigated by a comparison of the results of the PBS test between ambient air and vacuum. The film density was varied by changing the deposition temperature. The TFT with low-density SiO2 passivation exhibited a more severe threshold voltage shift (ΔV th) under the PBS in ambient air than in vacuum. In contrast, no significant difference in ΔV th was observed from the TFT with a dense SiO2 passivation. Thus, a dense passivation is essential for reducing ambient effects for IGZO TFTs." @default.
- W2810587947 created "2018-07-10" @default.
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- W2810587947 date "2018-06-29" @default.
- W2810587947 modified "2023-09-24" @default.
- W2810587947 title "Correlation between passivation film density and reliability of In–Ga–Zn–O thin-film transistors" @default.
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- W2810587947 doi "https://doi.org/10.7567/jjap.57.088001" @default.
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