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- W2810692912 abstract "A new nonvolatile memory based on intersubband transitions and electron accumulation in GaN/AlN resonant tunneling diodes (RTDs) was investigated toward the realization of a high-speed nonvolatile random-access memory (RAM) operating on picosecond time scales. It was shown that the endurance of write/erase memory operations can be enhanced by reducing the structural inhomogeneity of GaN/AlN RTDs. Neither mechanical damage nor significant degradation of current–voltage characteristics was observed after repeated write/erase memory operations using GaN/AlN RTDs with small degrees of inhomogeneity. High-endurance nonvolatile RAMs for computing systems are expected to be realized by further improvement in the crystal quality of GaN/AlN RTDs." @default.
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- W2810692912 date "2018-06-22" @default.
- W2810692912 modified "2023-09-23" @default.
- W2810692912 title "Stabilization of nonvolatile memory operations using GaN/AlN resonant tunneling diodes by reducing structural inhomogeneity" @default.
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- W2810692912 doi "https://doi.org/10.7567/jjap.57.070310" @default.
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