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- W2811210053 abstract "N-face double heterostructures (DHs) composed of 30-nm-thick InN layers sandwiched with GaN buffer and cap layers were grown by metalorganic vapor phase epitaxy. A high InN growth temperature is necessary for obtaining good radiative properties in the temperature range from 595 to 675 °C. Using a lower growth temperature for the GaN cap layer (550 °C) than for the InN layer (675 °C) enables us to fabricate a high-quality N-face GaN/InN/GaN DH having abrupt heterointerfaces as well as strong band-edge photoluminescence at around 0.75 eV at the measurement temperature of 83 K." @default.
- W2811210053 created "2018-07-10" @default.
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- W2811210053 date "2018-07-02" @default.
- W2811210053 modified "2023-09-26" @default.
- W2811210053 title "N-face $(000bar{1})$ GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy" @default.
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- W2811210053 doi "https://doi.org/10.7567/apex.11.081001" @default.
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