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• W2811234689 abstract "Most oxide semiconductor photoanode materials for water splitting are synthesized in ambient environment. Oxygen vacancy exists in these samples making them intrinsically n-type at the as-synthesized state. Oxygen vacancy has been widely reported for enhancing the performance of a photoanode by improving the electron conductivity. Besides the effect on the bulk materials properties, oxygen vacancy also plays an important role in the interfacial charge transfer to electrolyte, on which much less attention has been paid in the past. Herein, we found that although air-annealed W-doped BiVO4 has a higher electron density, lower surface charge transfer resistance, and a slightly better light absorption than the O2-annealed sample, the latter displays a higher photocurrent density. Experimentally we found that the enhanced performance comes from a better charge separation efficiency, despite that the presence of oxygen vacancy does lead to a better charge transfer efficiency. Theoretical calculation finds that ..." @default.
• W2811234689 created "2018-07-10" @default.
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• W2811234689 date "2018-06-28" @default.
• W2811234689 modified "2023-10-12" @default.
• W2811234689 title "Clarifying the Roles of Oxygen Vacancy in W-Doped BiVO₄ for Solar Water Splitting" @default.
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• W2811234689 doi "https://doi.org/10.1021/acsaem.8b00559" @default.
• W2811234689 hasPublicationYear "2018" @default.
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