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- W2811301097 abstract "Abstract Resistance random access memory (RRAM) is a promising memory technology in the applications of memory device. Herein, the amorphous TiO2 thin film was grown onto titanium (Ti) foil by anodic oxidation. Further, the Ag/TiO2/Ti sandwich structure device was prepared, which displays a resistive switching memory effect with a high HRS/LRS resistance ratio with ∼27 at room temperature when the TiO2 film was oxidized ∼5 min. Finally, the formation/rupture models of Ag conductive filaments are suggested to explain the resistive switching memory behavior. This work open a new way for preparing the RRAM device for memory applications in the future." @default.
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- W2811301097 date "2018-08-01" @default.
- W2811301097 modified "2023-10-16" @default.
- W2811301097 title "Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device" @default.
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- W2811301097 doi "https://doi.org/10.1016/j.cplett.2018.06.063" @default.
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