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- W28191421 abstract "Publisher Summary This chapter reviews ab initio attempts to understand and describe compensation in widegap II–VI materials, and then describe a phenomenologieal model that is able to account for most of the experimentally observed doping limitations. In the chapter, this model is further extended to give some insight into microscopic mechanisms leading to compensation during nitrogen doping, and is used to explain important properties of contacts to p-ZnSe. Most experimental results on the maximum doping levels obtained in wide gap II–VI materials can be explained by a model that assumes a pinning of the Fermi level at a fixed position with respect to the vacuum level. In the case of n-type doping, this position is about 130 meV above the ZnSe conduction band edge for nearly all II–VI compounds. For p-doping, two different values (namely, 120 meV and 580 meV above the ZnSe valence band edge) are obtained for doping with radio frequency and direct current (DC) nitrogen plasma, respectively. In agreement with the model, an upward shift of the valence band edge through surface segregation—or the use of carefully designed superlattices—has the effect of increasing the obtained p-doping level. This fact can be used to gain more flexibility in the design of optoelectronic devices emitting in the blue spectral region. The formation of ohmic contacts to p-ZnSe is a process governed by diffusion. The results presented can be understood under the assumption that nitrogen diffuses along dislocations from the ZnTe cap into the underlying ZnSe. The excess of nitrogen leads to a highly resistive zone that must be overcome by a tunneling process and thus increases the operation voltages of ZnSe based diodes." @default.
- W28191421 created "2016-06-24" @default.
- W28191421 creator A5075528666 @default.
- W28191421 date "2000-01-01" @default.
- W28191421 modified "2023-10-16" @default.
- W28191421 title "Doping Limits and Bandgap Engineering in Wide Gap II–VI Compounds" @default.
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- W28191421 doi "https://doi.org/10.1016/b978-081551439-8.50003-1" @default.
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