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• W2831371567 abstract "In this paper, we present a solution for N&P MOS contact resistivity (p <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> ) improvement by adoption of highly doped epitaxial source/drain (S/D), contact ion implantation and advanced laser anneal. An ultra-low ρ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> =3D 9.01×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-10</sup> Ωcm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> on NMOS contact chain (CC) is achieved using highly doped (HD) Si:P selective epi in S/D combined with Ge PAI (pre-amorphization implant) and Applied Materials' nanosecond laser anneal (NLA). In addition, a record low ρ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> =3D 1.16 ×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-9</sup> Ωcm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> for PMOS CC is demonstrated by Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.55</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>045</sub> :B epi, Ga cryo ion implant and NLA. NLA enables super-activation of implanted dopants and dopants in the in-situ HD S/D epi films ([P]: 3.0-10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>21</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> for NSD epi; [B]: 1.0x10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>21</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> for PSD epi). These new process technologies provide a pathway to achieve the target p <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> required for transistor performance in advanced logic devices." @default.
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• W2831371567 date "2018-04-01" @default.
• W2831371567 modified "2023-09-28" @default.
• W2831371567 title "Novel solutions to enable contact resistivity <1E-9 Ω-cm² for 5nm node and beyond" @default.
• W2831371567 doi "https://doi.org/10.1109/vlsi-tsa.2018.8403817" @default.
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