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- W283556768 abstract "Abstract The formation process of a positively charged radiation defect bound chemically with a diamond lattice is considered. This defect originates as a result of a negative muon capture by a carbon nucleus and formation of the so called “pseudo-boron” muonic atom μB. Numerical calculations (Antipov et al., 2012) of the neutralization kinetics of the radiation defect have shown that it lacks a time interval for neutralization during electron trapping in a track within a muon life-time τμ = 2.2∙10− 6 s. Therefore, there appeared a necessity for considering alternative neutralization processes. Thus, a model of the positively charged μB+ defect formation chemically bonded with a lattice, is suggested. Quantum-chemical calculations of a defect chemical bond energy with lattice atoms were carried out. Based on numerical calculations, estimates of formation rate w of the chemically bound positively charged defect were obtained, yielding w ≈ 1.7∙1011 s− 1. It is shown that defect neutralization is caused by the electron filling of a broken chemical bond, and this is characterized by the lattice relaxation time." @default.
- W283556768 created "2016-06-24" @default.
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- W283556768 date "2015-09-01" @default.
- W283556768 modified "2023-09-27" @default.
- W283556768 title "Formation of chemically bound positively charged radiation defect induced by negative muon in diamond crystals" @default.
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- W283556768 doi "https://doi.org/10.1016/j.diamond.2015.05.002" @default.
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