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• W2883049532 abstract "We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature $$T_mathrm{c}$$ , sheet resistance $$R_mathrm{s}$$ and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power $$hbox {NEP}_mathrm{opt} approx 2.3times 10^{-15}~hbox {W}/sqrt{hbox {Hz}}$$ , which is promising for passive terahertz imaging applications." @default.
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• W2883049532 date "2018-07-18" @default.
• W2883049532 modified "2023-09-26" @default.
• W2883049532 title "Design and Characterisation of Titanium Nitride Subarrays of Kinetic Inductance Detectors for Passive Terahertz Imaging" @default.
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• W2883049532 doi "https://doi.org/10.1007/s10909-018-2023-z" @default.
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