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• W2883144436 abstract "We report the effect of doping fluorine in the offset region on the performance of coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The TFTs with 4-μm offset length at both sides of the gate were fabricated. Hall mobility of the offset region a-IGZO increases, and its resistivity (ρ) decreases with increasing F doping concentration. The TFTs with 7 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> carrier concentration in the offset region exhibit the field-effect mobility of 27.17 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V· s. The fabricated 23-stage ring oscillator (RO) shows an oscillation frequency of 2.27 MHz at the supply voltage of 20 V with a propagation delay of 9.5 ns/stage, which" @default.
• W2883144436 created "2018-08-03" @default.
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• W2883144436 date "2018-09-01" @default.
• W2883144436 modified "2023-10-17" @default.
• W2883144436 title "Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs" @default.
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• W2883144436 doi "https://doi.org/10.1109/led.2018.2856760" @default.
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