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- W2883806625 abstract "Abstract The elaboration of novel semiconductor devices for specific applications very often requires the growth of sequences of thin films of semiconductor alloys with varied compositions, high structural quality, and accurate control of the composition and thickness. Starting with a brief overview of molecular beam epitaxy (MBE) and related techniques employed for the growth of II–VI ternary alloys, this chapter focuses on a detailed description of submonolayer pulsed beam epitaxy (SPBE), a technique suitable for the layer-by-layer growth of ternary alloys. SPBE allows the modification of the ternary alloy composition in real time, without interruption of the growth process and without modification of the effusion cell fluxes. With SPBE, it is possible to tune the composition of each individual alloy monolayer. SPBE is based on the pulsed supply of the reactant species and on the self-regulated process of the surface saturation with the chemisorbed species under the appropriate growth conditions. The SPBE technique was explained and illustrated with the growth of several quantum well heterostructures based on Zn1−xCdxSe and Zn1−xCdxTe alloys." @default.
- W2883806625 created "2018-08-03" @default.
- W2883806625 creator A5039040273 @default.
- W2883806625 date "2018-01-01" @default.
- W2883806625 modified "2023-09-26" @default.
- W2883806625 title "Layer-by-Layer Growth of Thin Films of Ternary Alloys of II–VI Semiconductors by Submonolayer Pulsed Beam Epitaxy (SPBE)" @default.
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- W2883806625 doi "https://doi.org/10.1016/b978-0-12-812136-8.00014-1" @default.
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