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• W2883905390 abstract "Layered transition metal dichalcogenide materials grown over a conventional 3D semiconductor substrate have ignited a spark of interest in the electronics industry. The integration of these 2D layered materials extensively addresses the formidable challenges faced by a new generation of opto-electronic and photovoltaic devices. Herein, we have demonstrated a 2D/3D heterojunction type photodetector by depositing MoS2 on a GaN substrate with a mass-scalable sputtering method. Spectroscopic and microscopic characterizations expose the signature of the highly crystalline, homogeneous and controlled growth of a deposited few-layer MoS2 film. The greater light absorption of few-layer MoS2 results in the high performance of the MoS2/GaN photodetector. Our device shows high external spectral responsivity (~103 A W−1) and detectivity (~1011 Jones) with a very fast response time (~5 ms). Our obtained results are significantly better than previous MoS2- and GaN-based photodetectors. This work unveils a new perspective in MoS2/GaN heterojunctions for high-performance optoelectronic applications." @default.
• W2883905390 created "2018-08-03" @default.
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• W2883905390 date "2018-08-08" @default.
• W2883905390 modified "2023-09-24" @default.
• W2883905390 title "Wafer-scale synthesis of a uniform film of few-layer MoS₂ on GaN for 2D heterojunction ultraviolet photodetector" @default.
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• W2883905390 doi "https://doi.org/10.1088/1361-6463/aad4e8" @default.
• W2883905390 hasPublicationYear "2018" @default.
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