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- W2884233806 abstract "Abstract The basic principle of site-controlled epitaxy is to use a nanopattern or other surface feature to guide the inherently disordered nucleation of quantum dots (QD) in predetermined locations. The ability to position high-quality epitaxial QDs deterministically is extremely important for the integration of quantum emitters in photonic structures, such as microcavities for emerging quantum photonic application. Achieving highly ordered QD arrays requires precise control of growth parameters, in particular growth temperature, which define adatom diffusion and desorption on the patterned surface. Besides controlling the nucleation site, the nanopatterned surface affects the size, shape, and chemical composition of the QDs, thus allowing tuning of the QD properties by pattern design. In this chapter, we review the fundamental concepts of epitaxial growth and present a detailed description of the growth and patterning techniques for different QD architectures forming the framework of site-controlled epitaxy of InAs QDs on nanoimprint lithography patterned GaAs. From an application perspective, we discuss integration of site-controlled QDs in photonic and plasmonic structures." @default.
- W2884233806 created "2018-08-03" @default.
- W2884233806 creator A5003966333 @default.
- W2884233806 creator A5027973769 @default.
- W2884233806 creator A5029460637 @default.
- W2884233806 creator A5083631962 @default.
- W2884233806 date "2018-01-01" @default.
- W2884233806 modified "2023-09-25" @default.
- W2884233806 title "Site-Controlled Epitaxy of InAs Quantum Dots on Nanoimprint Lithography Patterns" @default.
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