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- W2884273526 abstract "The dc spin-to-charge conversions of tantalum (Ta) in $mathrm{Ta}/mathrm{C}{mathrm{o}}_{40}mathrm{F}{mathrm{e}}_{40}{mathrm{B}}_{20}$ bilayer structures are investigated utilizing spin pumping and inverse spin Hall effects (ISHE). From Ta thickness $({t}_{mathrm{Ta}})$-dependent resistivity and x-ray diffraction measurements, we found that Ta films, below 30 nm in thickness, are $ensuremath{beta}$-phase dominated. The damping enhancement shows a fast increase with ${t}_{mathrm{Ta}}$ when ${t}_{mathrm{Ta}}<1phantom{rule{0.16em}{0ex}}mathrm{nm}$ and reaches a saturation value at $ensuremath{sim}1.5phantom{rule{0.16em}{0ex}}mathrm{nm}$. The ISHE induced charge voltages have opposite signs for Ta and Pt. From ${t}_{mathrm{Ta}}$-dependent spin pumping produced ISHE voltage and precession angle measurements, the normalized spin-charge conversion signal is found to increase with ${t}_{mathrm{Ta}}$ and saturate at $ensuremath{sim}15phantom{rule{0.16em}{0ex}}mathrm{nm}$. Our findings can be understood with a recently developed theory [Phys. Rev. Lett. 114, 126602 (2015)], which includes spin backflow and a spin loss at the interface. With a fitted spin loss factor of $0.02ifmmodepmelsetextpmfi{}0.02$, we extract the spin Hall angle and spin diffusion length of high resistivity Ta to be ${ensuremath{theta}}_{mathrm{SH}}=ensuremath{-}0.0062ifmmodepmelsetextpmfi{}0.001$ and ${ensuremath{lambda}}_{mathrm{sd}}=5.1ifmmodepmelsetextpmfi{}0.6phantom{rule{0.16em}{0ex}}mathrm{nm}$, respectively." @default.
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- W2884273526 date "2018-07-23" @default.
- W2884273526 modified "2023-10-18" @default.
- W2884273526 title "Determination of spin Hall angle and spin diffusion length in <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mi>β</mml:mi></mml:math> -phase-dominated tantalum" @default.
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- W2884273526 doi "https://doi.org/10.1103/physrevmaterials.2.074406" @default.
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