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• W2884461768 abstract "Thermal conductance in multifinger silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) is usually modeled at room temperature with a linear dependence on the total gate width, which is valid only when thermal coupling saturates. This paper presents a physically based model for calculating the thermal resistance of SOI-MOSFETs that accounts for progressive thermal coupling as the number of fingers increases and the substrate temperature. The model, extracted from a variety of gate geometries using the ac conductance method, correctly predicts the temperature rise in the device channel up to a substrate temperature of 150 °C. Finally, this simple thermal resistance model, which is applicable to nanometer-scale transistors, can easily be added to circuit simulators." @default.
• W2884461768 created "2018-08-03" @default.
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• W2884461768 date "2018-09-01" @default.
• W2884461768 modified "2023-09-24" @default.
• W2884461768 title "Thermal Resistance Characterization for Multifinger SOI-MOSFETs" @default.
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• W2884461768 doi "https://doi.org/10.1109/ted.2018.2853799" @default.
• W2884461768 hasPublicationYear "2018" @default.
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