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• W2884652480 abstract "In this study, VO2 films were deposited by thermal atomic layer deposition with vanadium oxytriisopropoxide as a vanadium precursor and deionized water as a reactant. Postdeposition annealing was performed in order to enhance the crystallinity of VO2 films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy, and transmission electron microscopy were used to characterize the physical and chemical properties of the as-deposited and annealed VO2 films. The results indicated that postdeposition annealing enhanced the crystallinity of the VO2 films and increased the area ratio of V4+. Finally, the electrical properties of the VO2 films were analyzed using a semiconductor parameter analyzer. The Ion/Ioff ratio increased from 102 to 104 during postdeposition annealing at 450 °C. There were also significant increases in the hysteresis window." @default.
• W2884652480 created "2018-08-03" @default.
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• W2884652480 date "2018-07-13" @default.
• W2884652480 modified "2023-10-12" @default.
• W2884652480 title "Postdeposition annealing on VO₂ films for resistive random-access memory selection devices" @default.
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• W2884652480 doi "https://doi.org/10.1116/1.5021082" @default.
• W2884652480 hasPublicationYear "2018" @default.
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