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- W2884732408 abstract "The potential distribution image in the channel plane of an amorphous InGaZnO4 (a-IGZO) thin film transistor in the device operation was evaluated by bias applied hard X-ray photoelectron spectroscopy (HAXPES). We observed that the potential in the direction of channel length changed as a function of source-drain and⁄or gate voltage condition. In particular, in the case of the turn-on voltage condition (saturation regime), a high potential region in the a-IGZO channel was clearly observed. HAXPES under bias voltage was found to be very useful to evaluate the potential in the channel region during transistor operation." @default.
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- W2884732408 date "2017-01-01" @default.
- W2884732408 modified "2023-10-02" @default.
- W2884732408 title "Evaluation of Potential Distribution in Channel Region of Amorphous InGaZnO Thin Film Transistor by Bias Applied Hard X-ray Photoelectron Spectroscopy" @default.
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- W2884732408 doi "https://doi.org/10.1384/jsa.24.136" @default.
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