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• W2884969549 abstract "In this work, TiVCrZrHf high entropy alloy ultrathin films were deposited on Si/SiO2 substrate as diffusion barrier layers of Cu thin films by magnetron sputtering. The microstructure and texture of TiVCrZrHf/Cu thin films during annealing were investigated. The experimental results show that the TiVCrZrHf films could retard interdiffusion in Cu thin films upon annealing up to 600 °C, and retain stable amorphous structure due to their high entropy and limited diffusion kinetic. The rapid diffusion paths occurred in barrier layer caused by the crystallization of TiVCrZrHf films after annealing at 700 °C. Interdiffusion between Cu and Si though the TiVCrZrHf barriers defects and grain boundaries occurred at 700 °C, and the Cu3Si phase was thus formed. Moreover, an extremely sharp {1 1 1} fiber texture on TiVCrZrHf barrier layer was formed in Cu thin film. Thus, the excellent thermal and structural stabilities of TiVCrZrHf film revealed it to be a potential candidate barrier material for Cu interconnects." @default.
• W2884969549 created "2018-08-03" @default.
• W2884969549 creator A5059358429 @default.
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• W2884969549 date "2018-11-01" @default.
• W2884969549 modified "2023-10-14" @default.
• W2884969549 title "Effect of high entropy alloys TiVCrZrHf barrier layer on microstructure and texture of Cu thin films" @default.
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• W2884969549 doi "https://doi.org/10.1016/j.matlet.2018.07.080" @default.
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