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• W2885438335 startingPage "1800371" @default.
• W2885438335 abstract "The incorporation of SiV centers during diamond overgrowth on top of partly covered monocrystalline diamond pillars with diameters down to 200 nm are reported. The pillars themselves are prepared via electron beam lithography and inductively coupled plasma reactive ion etching. Then they are covered with a spin-on-glass (SOG) (perhydropolysilazane, PHPS) still jutting the apices of the pillars. After a short overgrowth step and removal of the residual SOG the optical investigations reveal the presence of ensembles of SiV centers in the overgrown part of the pillars, a specific location of the centers, and a very strong PL signal." @default.
• W2885438335 created "2018-08-22" @default.
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• W2885438335 date "2018-08-12" @default.
• W2885438335 modified "2023-10-17" @default.
• W2885438335 title "Homoepitaxial Diamond Structures with Incorporated SiV Centers" @default.
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• W2885438335 doi "https://doi.org/10.1002/pssa.201800371" @default.
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