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• W2885619220 abstract "A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization." @default.
• W2885619220 created "2018-08-22" @default.
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• W2885619220 date "2018-09-01" @default.
• W2885619220 modified "2023-10-15" @default.
• W2885619220 title "Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors" @default.
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• W2885619220 doi "https://doi.org/10.1109/ted.2018.2859224" @default.
• W2885619220 hasPublicationYear "2018" @default.
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